Products Description
IGBT MOSFET Transistor Factory - AGM30P05A PDFN5*6 Switching Applications
Quantity
FOB Price
≥1000
US$ 0.88
100–999
US$ 1.69
10–99
US$ 2.58
Product Attribute
Model Number:
PTZTE256.8A
Type:
Transistor
Brand Name:
Original
Package Type:
Surface Mount
Description:
DIODE ZENER 6.8V 1W PMDS
Place of Origin:
Guangdong, China
Package / Case:
E
Operating Temperature:
Original
Series:
Original
D/C:
24+
Application:
Transistor
Current - Collector (Ic) (Max):
Original
Voltage - Collector Emitter Breakdown (max):
Original
Vce Saturation (Max) @ Ib, Ic:
Original
DC Current Gain (hFE) (Min) @ Ic, Vce:
Original
Power - Max:
Original
Frequency - Transition:
Original
Mounting Type:
SMD
Resistor - Base (R1):
Original
Resistor - Emitter Base (R2):
Original
FET Type:
Original
FET Feature:
Standard
Drain to Source Voltage (Vdss):
Standard
Current - Continuous Drain (Id) @ 25°C:
Standard
Rds On (Max) @ Id, Vgs:
Standard
Vgs(th) (Max) @ Id:
Standard
Gate Charge (Qg) (Max) @ Vgs:
Standard
Input Capacitance (Ciss) (Max) @ Vds:
Standard
Frequency:
Standard
Current Rating (Amps):
Standard
Noise Figure:
Standard
Power - Output:
Standard
Voltage - Rated:
Standard
Drive Voltage (Max Rds On, Min Rds On):
Standard
Vgs (Max):
Standard
IGBT Type:
Standard
Configuration:
T-Type
Vce(on) (Max) @ Vge, Ic:
Standard
Input Capacitance (Cies) @ Vce:
Standard
Input:
Standard
NTC Thermistor:
Standard
Voltage - Breakdown (V(BR)GSS):
Standard
Current - Drain (Idss) @ Vds (Vgs=0):
Standard
Current Drain (Id) - Max:
Standard
Voltage - Cutoff (VGS off) @ Id:
Standard
Resistance - RDS(On):
Standard
Voltage - Output:
Standard
Voltage - Offset (Vt):
Standard
Current - Gate to Anode Leakage (Igao):
Standard
Current - Valley (Iv):
Standard
Current - Peak:
Standard
Transistor Type:
Standard
Mounting Type:
SMD
Packaging and delivery
Selling Units:
Single item
More
Sample Policy:
Free samples are available
IGBT MOSFET Transistor Factory - AGM30P05A PDFN5*6 Switching Applications
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