Products Description
MOSFET Semiconductor - Manufacturer - IRGB6B60KD GB6B60KD TO-220 600V 7A
Quantity
FOB Price
≥100
US$ 1.8
10–99
US$ 2
≤9
US$ 4
Product Attribute
Model Number:
IRGB6B60KD
Type:
MOSFET
Brand Name:
Original
Package Type:
Throught Hole
Description:
IRGB6B60KD
Place of Origin:
Taiwan, China
Package / Case:
TO-220
D/C:
2024
Application:
MOSFET driver
Supplier Type:
Original Manufacturer
Media Available:
Datasheet
Voltage - Collector Emitter Breakdown (max):
Original
Vce Saturation (Max) @ Ib, Ic:
Original
DC Current Gain (hFE) (Min) @ Ic, Vce:
Original
Power - Max:
Original
Frequency - Transition:
Original
Mounting Type:
Through Hole
Resistor - Base (R1):
Original
Resistor - Emitter Base (R2):
Original
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
Original
Current - Continuous Drain (Id) @ 25°C:
Original
Rds On (Max) @ Id, Vgs:
Original
Vgs(th) (Max) @ Id:
Original
Gate Charge (Qg) (Max) @ Vgs:
Original
Input Capacitance (Ciss) (Max) @ Vds:
Original
Frequency:
Original
Current Rating (Amps):
Original
Noise Figure:
Original
Power - Output:
Original
Voltage - Rated:
Original
Drive Voltage (Max Rds On, Min Rds On):
Original
Vgs (Max):
Original
IGBT Type:
Original
Mounting Type:
Original
Packaging and delivery
Selling Units:
Single item
Single package size:
15X10X5 cm
Single gross weight:
0.050 kg
More
Sample Policy:
Free samples are available
MOSFET Semiconductor - Manufacturer - IRGB6B60KD GB6B60KD TO-220 600V 7A
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